Author/Authors :
W.، Bachtold, نويسنده , , M.، Haiml, نويسنده , , O.، Ostinelli, نويسنده , , G.، Almuneau, نويسنده , , M.، Ebnother, نويسنده , , E.، Gini, نويسنده ,
Abstract :
Monolithic distributed Bragg reflectors (DBRs) consisting of AlGaAsSb/InP quarter-wave multilayer were grown by metalorganic vapour-phase epitaxy (MOVPE) on InP substrates. The quality of antimonide MOVPE grown material has been optimised to achieve highly reflective, defect-free, DBR stacks. With 21 AlGaAsSb/InP periods, reflectivity up to 97% at 1.59 (mu)m was measured.
