Title of article
MOVPE growth of long wavelength AlGaAsSb/InP Bragg mirrors
Author/Authors
W.، Bachtold, نويسنده , , M.، Haiml, نويسنده , , O.، Ostinelli, نويسنده , , G.، Almuneau, نويسنده , , M.، Ebnother, نويسنده , , E.، Gini, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-93
From page
94
To page
0
Abstract
Monolithic distributed Bragg reflectors (DBRs) consisting of AlGaAsSb/InP quarter-wave multilayer were grown by metalorganic vapour-phase epitaxy (MOVPE) on InP substrates. The quality of antimonide MOVPE grown material has been optimised to achieve highly reflective, defect-free, DBR stacks. With 21 AlGaAsSb/InP periods, reflectivity up to 97% at 1.59 (mu)m was measured.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107564
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