Author/Authors :
A.D.، Stiff-Roberts, نويسنده , , S.، Chakrabarti, نويسنده , , J.، Singh, نويسنده , , P.، Bhattacharya, نويسنده , , X.H.، Su, نويسنده ,
Abstract :
A novel quantum dot infrared photodetector design, based on double-barrier resonant tunnelling, is proposed and demonstrated. Theoretical calculations predict significantly lower dark currents in this device, compared to conventional quantum dot photodetectors. This is borne out of experimental results.
