Title of article
40 Gbit/s electroabsorption modulators with 1.1 V driving voltage
Author/Authors
T.، Saitoh, نويسنده , , Y.، Kondo, نويسنده , , H.، Nakajima, نويسنده , , M.، Tamura, نويسنده , , H.، Fukano, نويسنده , , T.، Yamanaka, نويسنده , , Y.، Akage, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-1143
From page
1144
To page
0
Abstract
40 Gbit/s electroabsorption modulators with an RF extinction ratio of 10 dB and driven by a peak-to-peak voltage as low as 1.1 V have been successfully fabricated. This low driving voltage is achieved by employing strain-compensated InGaAlAs/InAlAs multi-quantum-well layers with very good extinction characteristics and by optimising the number of wells and electroabsorption length.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107698
Link To Document