Author/Authors :
S.R.، Bank, نويسنده , , M.A.، Wistey, نويسنده , , H.B.، Yuen, نويسنده , , L.L.، Goddard, نويسنده , , H.P.، Bae, نويسنده , , J.S.، Harris, نويسنده ,
Abstract :
Substantially reduced threshold current density and improved efficiency in long-wavelength (>1.4 (mu)m) GaAsbased lasers are reported. A 20*1220 (mu)m as-cleaved device showed a room temperature continuous-wave threshold current density of 580 A/cm/sup 2/, external efficiency of 53%, and 200 mW peak output power at 1.5 (mu)m. The pulsed threshold current density was 450 A/cm/sup 2/ with 1145 mW peak output power.
