Title of article :
Raman emission in porous silicon at 1.54 (mu)m
Author/Authors :
B.، Jalali, نويسنده , , A.، De Rossi, نويسنده , , L.، Sirleto, نويسنده , , V.، Raghunatan, نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
-1220
From page :
1221
To page :
0
Abstract :
There have been many reports regarding visible luminescence and light emission at 1.54 (mu)m, at room temperature, from porous silicon and from Er-doped porous silicon, respectively. Described is a different approach, based on Raman scattering in porous silicon, to generate radiation at 1.54 (mu)m. Preliminary experimental results regarding Raman emission in porous silicon samples at 1.54 (mu)m are also reported.
Keywords :
Hydrograph
Journal title :
IEE Electronics Letters
Serial Year :
2004
Journal title :
IEE Electronics Letters
Record number :
107748
Link To Document :
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