Author/Authors :
J.C.، Campbell, نويسنده , , R.، Sidhu, نويسنده , , Jr.، Holmes, A.L., نويسنده , , H.، Chen, نويسنده , , N.، Duan, نويسنده , , G.V.، Karve, نويسنده ,
Abstract :
A resonant-cavity enhanced, separate absorption, charge, and multiplication avalanche photodiode using GaAs/sub 0.8/Sb/sub 0.2/ quantum wells on GaAs has been demonstrated. The device exhibited high gain and <1 nA dark current at 90% of breakdown. Peak quantum efficiency of 93% and full-width at half-maximum of 7 nm were observed at 1.064 (mu)m.
