Title of article
GaAsSb resonant-cavity enhanced avalanche photodiode operating at 1.06 (mu)m
Author/Authors
J.C.، Campbell, نويسنده , , R.، Sidhu, نويسنده , , Jr.، Holmes, A.L., نويسنده , , H.، Chen, نويسنده , , N.، Duan, نويسنده , , G.V.، Karve, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-1295
From page
1296
To page
0
Abstract
A resonant-cavity enhanced, separate absorption, charge, and multiplication avalanche photodiode using GaAs/sub 0.8/Sb/sub 0.2/ quantum wells on GaAs has been demonstrated. The device exhibited high gain and <1 nA dark current at 90% of breakdown. Peak quantum efficiency of 93% and full-width at half-maximum of 7 nm were observed at 1.064 (mu)m.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107799
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