Author/Authors :
M.، Kauer, نويسنده , , K.، Johnson Marcia نويسنده , , S.E.، Hooper, نويسنده , , V.، Bousquet, نويسنده , , J.، Heffernan, نويسنده , , C.، Zellweger, نويسنده ,
Abstract :
The highest power InGaN light emitting diodes produced by molecular beam epitaxy are reported. When operated in continuous-wave mode at room temperature, the optical output power of the devices was 3.75 mW at a forward injection current of 20 mA, and the maximum output power was 14.3 mW. The electroluminescence had a peak at 405 nm and a full width half maximum of 15 nm. The electrical characteristics showed a voltage of 4.8 V and a resistance of 31 (omega) at a forward injection current of 20 mA.
