Author/Authors :
T.M.، Abdolkader, نويسنده , , H.H.، Hassan, نويسنده , , W.، Fikry, نويسنده , , O.A.، Omar, نويسنده ,
Abstract :
The transfer matrix method (TMM) has been extensively used to investigate quantum-mechanical tunnelling through potential barriers. Reported is the application of TMM, for the first time, to solve the Schrodinger equation in double-gate MOSFETs. The method is shown to be more accurate than the conventional finite difference method, especially for high energy levels.
