Room-temperature intersubband emission from GaInAs-AlAsSb quantum cascade structure

Room-temperature (300 K) intersubband electroluminescence has been obtained from a quantum cascade structure adopting triple-well vertical-transition active regions, based on Ga/sub 0.47/In/sub 0.53/As/AlAs/sub 0.56/Sb/sub 0.44/ heterostructures grown lattice-matched on InP substrate by molecular beam epitaxy. The emission peak wavelength varies from 4.3 (mu)m at 77 K to 4.5 (mu)m at 300 K.