Title of article
Thin-film (lambda)~3.7 (mu)m W laser released from InAs substrate
Author/Authors
I.، Vurgaftman, نويسنده , , J.R.، Meyer, نويسنده , , L.، Song, نويسنده , , S.، Degroote, نويسنده , , P.، Heremans, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-1341
From page
1342
To page
0
Abstract
A mid-infrared type-II ʹWʹ laser fabricated by releasing the epitaxial film from its original InAs substrate is reported. The process exploits the extreme selectivity between GaSb and InAs when etched by hydrochloric acid. The detached film is coated with an Si/sub 3/N/sub 4/ optical cladding layer, grafted to a foreign GaAs substrate, and cleaved into laser bars. For epitaxial-side-up mounting, the device operates to 70 K, with a low threshold (~=150 W/cm/sup 2/) when pumped with the maximum available CW power of 320 mW from a 980 nm laser diode.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107829
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