Author/Authors :
O.V.، Sulima, نويسنده , , S.K.، Lohokare, نويسنده , , V.A.، Solovev, نويسنده , , S.V.، Ivanov, نويسنده , , D.W.، Prather, نويسنده ,
Abstract :
Results obtained from the fabrication and characterisation of double heterostructure AlGaAsSb/AlGaSb pin photodetectors designed for 1.55 (mu)m wavelength are reported. The photodetectors were fabricated using a customised inductively coupled plasma etching process, and exhibited high external quantum efficiency and record speed characteristics (3 dB bandwidth of 10 GHz).
