Title of article
High-performance, 1.55 (mu)m AlGaAsSb/AlGaSb pin photodetectors
Author/Authors
O.V.، Sulima, نويسنده , , S.K.، Lohokare, نويسنده , , V.A.، Solovev, نويسنده , , S.V.، Ivanov, نويسنده , , D.W.، Prather, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-1376
From page
1377
To page
0
Abstract
Results obtained from the fabrication and characterisation of double heterostructure AlGaAsSb/AlGaSb pin photodetectors designed for 1.55 (mu)m wavelength are reported. The photodetectors were fabricated using a customised inductively coupled plasma etching process, and exhibited high external quantum efficiency and record speed characteristics (3 dB bandwidth of 10 GHz).
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107851
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