Author/Authors :
T.، Ito, نويسنده , , T.، Takeshita, نويسنده , , H.، Ito, نويسنده , , T.، Ishibashi, نويسنده , , Y.، Muramoto, نويسنده , , S.، Ando, نويسنده , , Y.، Hirota, نويسنده ,
Abstract :
A new InP-based avalanche photodiode with a p-type neutral absorption layer and a buried n-contact has been developed. From the test results, it is confirmed that the device has good receiver performance, with a minimum sensitivity of -26.8 dBm at 10 Gbit/s, and sufficient reliability.
