Author/Authors :
A.، Forchel, نويسنده , , D.، Gollub, نويسنده , , M.، Kamp, نويسنده , , S.R.، Bank, نويسنده , , M.A.، Wistey, نويسنده , , H.B.، Yuen, نويسنده , , J.، Seufert, نويسنده , , L.L.، Goddard, نويسنده , , J.S.، Harris, نويسنده ,
Abstract :
GaAs-based singlemode emission at 1.5 (mu)m has been realised for the first time in continuous-wave operation. GaInNAsSb active-layer material and GaAsN strain-compensating barriers have been used in combination with lateral distributed feedback. Laser diodes with a threshold current of 95 mA, an external efficiency of 0.15 W/A and a maximum output power of more than 10 mW could be demonstrated. A sidemode suppression ratio better than 31 dB could be realised at a singlemode emission wavelength of 1496 nm.
