Title of article :
Design method for fully integrated CMOS RF LNA
Author/Authors :
M.، Egels, نويسنده , , J.، Gaubert, نويسنده , , P.، Pannier, نويسنده , , S.، Bourdel, نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
-1512
From page :
1513
To page :
0
Abstract :
An efficient method for fully integrated RF CMOS LNA design is presented. A particular input matching topology enables inductor values to be selected in order to be integrated fully and to minimise the input losses. Moreover, an active device sizing method is used to achieve a 50 (Omega) input impedance with a low noise factor. Simulations show a 3.0 dB noise figure at 2.45 GHz for a power consumption of 10 mW in a 0.28 (mu)m RF CMOS process.
Keywords :
Hydrograph
Journal title :
IEE Electronics Letters
Serial Year :
2004
Journal title :
IEE Electronics Letters
Record number :
107938
Link To Document :
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