Title of article
Effects of RF stress on power and pulsed IV characteristics of AlGaN/GaN HEMTs with field-plate gates
Author/Authors
P.، Saunier, نويسنده , , R.، Birkhahn, نويسنده , , S.، Guo, نويسنده , , B.، Albert, نويسنده , , C.، Lee, نويسنده , , H.، Tserng, نويسنده , , L.، Witkowski, نويسنده , , G.، Munns, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-1546
From page
1547
To page
0
Abstract
The effects of RF stress on power and pulsed IV characteristics of field-plated AlGaN/GaN HEMTs fabricated on two different epitaxial structures are presented. The power degradation characteristics are shown. The RF stress resulted in different degrees of RF voltage and current swing reduction on the two wafers. The current dispersion became more aggravated after RF stress under high quiescent drain bias conditions in one of the structures.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107961
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