Title of article
Procedure for accurate noise modelling of microwave FETs against temperature
Author/Authors
O.، Pronic, نويسنده , , G.، Mitic, نويسنده , , J.، Randelovic, نويسنده , , V.، Markovic, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-1550
From page
1551
To page
0
Abstract
A procedure for accurate prediction of noise parameters of microwave MESFETs/HEMTs against temperature is proposed. The error correction functions calculated for one temperature are used for efficient transistor noise parameter modelling for various device ambient temperatures, as is shown by an example of packaged HEMT noise modelling.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107964
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