A micro-contact and wear model for chemical–mechanical polishing of silicon wafers

A micro-contact and wear model for chemical–mechanical polishing (CMP) of silicon wafers is presented in this paper. The model is developed on the basis of elastic–plastic micro-contact mechanics and abrasive wear theory. The synergetic effects of mechanical and chemical actions are formulated into the model. A close-form equation of material removal rate from the wafer surface is derived relating to the material, geometric, chemical and operating parameters in a CMP process. The model is evaluated by comparing the theoretical removal rates with those experimentally determined. Good agreement is obtained for both chemically active and inactive polishing processes. The model reveals some insights into the micro-contact and wear mechanisms of the CMP process. It suggests that the removal rate is sensitive to the particle concentration in the slurry, more sensitive to the applied load and operating speed and most sensitive to the surface hardness and slurry particle size. The model may be used to study the effects of different materials, geometry, slurry chemistry and operating conditions on CMP processes.