Influence of process parameters on CNX films obtained by laser-CVD at two wavelengths Original Research Article

The carbon nitride (CNx) films have been prepared by infrared (IR; at 10.6 μm) and ultraviolet (at 248 nm) laser induced chemical vapour deposition (CVD) using different ethylene/nitrous oxide/ammonia mixtures. The partial concentration of ammonia in mixtures was varied in order to obtain a higher nitrogen incorporation in the deposited films. The changes induced in the gas-phase composition by the laser radiation in different experimental conditions were determined by IR transmission measurements. The film composition was studied by X-ray photoelectron spectroscopy. The modification of the film chemical composition, specifically the dependence of the NC ratio, on the irradiation wavelength and on the reactants composition is described for the first time.