• Title of article

    Doping of diamond Original Research Article

  • Author/Authors

    R. Kalish، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1999
  • Pages
    5
  • From page
    781
  • To page
    785
  • Abstract
    Diamond is a wide-bandgap semiconductor with unsurpassed physical and chemical properties. When doped, semiconducting diamond can lead to the realization of electronic and optoelectronic devices with exceptional properties. Diamond can now be doped p-type, with boron, both during CVD diamond film growth and by ion-implantation, and n-type with phosphorus during CVD growth. This paper reviews the current status of diamond doping and describes the electronic properties of the doped layers. Some potential applications of doped semiconducting diamond are described.
  • Keywords
    B. Doping , CVD , Implantation , D. electronic properties , A. Diamond
  • Journal title
    Carbon
  • Serial Year
    1999
  • Journal title
    Carbon
  • Record number

    1117902