Title of article
Doping of diamond Original Research Article
Author/Authors
R. Kalish، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
5
From page
781
To page
785
Abstract
Diamond is a wide-bandgap semiconductor with unsurpassed physical and chemical properties. When doped, semiconducting diamond can lead to the realization of electronic and optoelectronic devices with exceptional properties. Diamond can now be doped p-type, with boron, both during CVD diamond film growth and by ion-implantation, and n-type with phosphorus during CVD growth. This paper reviews the current status of diamond doping and describes the electronic properties of the doped layers. Some potential applications of doped semiconducting diamond are described.
Keywords
B. Doping , CVD , Implantation , D. electronic properties , A. Diamond
Journal title
Carbon
Serial Year
1999
Journal title
Carbon
Record number
1117902
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