Title of article :
Minority-carrier transport parameters in CVD diamond Original Research Article
Author/Authors :
S. Salvatori، نويسنده , , M. C. Rossi، نويسنده , , F. Galluzzi، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Abstract :
A study is presented on minority carrier transport parameters, in particular mobility–lifetime products, in natural and CVD diamond materials with different morphology. μτ products are obtained by photocurrent versus field measurements and their values range between 10−8–10−5 cm2 V−1 depending on grain size and orientation. Observed variations are mainly related to mobility changes, while minority carrier lifetimes are almost constant around 10−10–10−9 s. The origin of such a behaviour is analysed in terms of gap state distribution arising from structural defects, impurities and non-diamond microphases.
Keywords :
D. Photoconductivity , B. Chemical vapor deposition , A. Diamond