Author/Authors :
S. Waidmann، نويسنده , , K. Bartsch، نويسنده , , I. Endler، نويسنده , , J. F. Fontaine، نويسنده , , B. Arnold، نويسنده , , M. Knupfer، نويسنده , , A. Leonhardt، نويسنده , , Yu. A. Nefyodov and H. J. Fink ، نويسنده ,
Abstract :
We have prepared thin diamond films by microwave assisted plasma chemical vapour deposition (MWCVD) and hot filament chemical vapour deposition (HFCVD). Diamond powder pre-treatment of the silicon substrates or bias potential were used for nucleation enhancement. Doping of the films was carried out in two ways: in-situ during the CVD process or after the deposition by ion implantation. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) have been applied to characterize the morphology and texture. Electron energy-loss spectroscopy in transmission was then used to investigate the electronic structure of the diamond films as a function of the preparation parameters and the doping level.
