Title of article :
Effects of hydrogen on electronic properties of doped diamond Original Research Article
Author/Authors :
Y. Dai، نويسنده , , C.X. Yan، نويسنده , , A.Y. Li، نويسنده , , Y. Zhang، نويسنده , , S.H. Han، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
6
From page :
1009
To page :
1014
Abstract :
We have investigated the effects of hydrogen on the electronic structure of diamond doped boron and sulfur using cluster model method within the frame of ab initio density functional theory (DFT). The results show that the presence of hydrogen results in a deep donor level with no change of conductivity type in sulfur-doped diamond samples and the formation of the multiple hydrogen–boron complexes may cause a conductivity type transition in the hydrogen-rich boron-doped diamond samples.
Keywords :
Diamond , Electronic properties
Journal title :
Carbon
Serial Year :
2005
Journal title :
Carbon
Record number :
1121077
Link To Document :
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