Growth of carbon nanotubes at temperatures compatible with integrated circuit technologies Original Research Article

The potential applications of carbon nanotubes grown for semiconductor and sensor devices are immense. But, this growth must be CMOS compatible and over large-areas, in excess of 4 inches in diameter, for any industrial interest. Reports of low-temperature growth of carbon nanotubes have mostly resulted in false dawns in the context of CMOS production, with direct integration for mass manufacturing remaining a challenge, as lower synthesis temperatures matched to manufacturing result in nanotubes with high defect levels. We report a unique ‘top-down’ synthesis method that allows energy delivery directly to the catalyst, resulting in higher quality nanotube growth at compatible low substrate temperatures. This growth is demonstrated over a large-area, whilst maintaining the silicon substrate below 350 °C. Long-range ordering of carbon nanotubes is supported by well developed second-order Raman peaks and HREM. The methodology developed is suitable to produce many nano-material systems, including graphene and silicon nanowires.