Author/Authors :
Jun Zhong، نويسنده , , Jiu-Jun Deng، نويسنده , , Bao-Hua Mao، نويسنده , , Frank” Tian Xie، نويسنده , , Xu-Hui Sun، نويسنده , , Zhigang Mou، نويسنده , , Cai-Hao Hong، نويسنده , , Ping Yang، نويسنده , , Sui-Dong Wang، نويسنده ,
Abstract :
The evolution of solid state N-doping in graphene has been probed using X-ray absorption near-edge structure (XANES) spectroscopy. The XANES spectra show that the modification of graphene with N species can be achieved by urea attachment at annealing temperatures lower than 300 °C. A transition from urea to amino species is observed at 400 °C. At higher temperatures, pyridinic and graphitic type doping are achieved. The results indicate that the electronic structure of graphene can be controlled by solid state treatment, involving different N species depending on the annealing process.
