Author/Authors :
Meng Cheng، نويسنده , , Rong Yang، نويسنده , , Lianchang Zhang، نويسنده , , Zhiwen Shi، نويسنده , , Wei Yang، نويسنده , , Duoming Wang، نويسنده , , Guibai Xie، نويسنده , , Dongxia Shi، نويسنده , , Guangyu Zhang، نويسنده ,
Abstract :
A simple and efficient method to repair defects in graphene oxide (GO) is reported, accompanied by a simultaneous reduction process by a methane plasma. The graphene after repair is of high quality. For a typical monolayer after repair and reduction, the minimum sheet resistance at the Dirac point and the Raman D/G peak intensity ratio are about 9.0 kΩ/□ and ∼0.53, respectively.
