Title of article :
Ion irradiation and defect formation in single layer graphene Original Research Article
Author/Authors :
Giuseppe Compagnini، نويسنده , , Filippo Giannazzo، نويسنده , , Sushant Sonde، نويسنده , , Vito Raineri، نويسنده , , Emanuele Rimini، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Pages :
7
From page :
3201
To page :
3207
Abstract :
Ion irradiation by 500 keV C+ ions has been used to introduce defects into graphene sheets deposited on SiO2 in a controlled way. The combined use of Raman spectroscopy and atomic force microscopy (AFM) allowed one to clarify the mechanisms of disorder fo
Journal title :
Carbon
Serial Year :
2009
Journal title :
Carbon
Record number :
1126358
Link To Document :
https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=1126358
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