Title of article :
Cryogenic readout electronics with silicon P-MOSFETS for the infrared astronomical satellite, ASTRO-F Original Research Article
Author/Authors :
T. Hirao، نويسنده , , Y. Hibi، نويسنده , , M. Kawada، نويسنده , , H. Nagata، نويسنده , , H. Shibai، نويسنده , , T. Watabe، نويسنده , , M. Noda، نويسنده , , T. Nakagawa، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2002
Pages :
6
From page :
2117
To page :
2122
Abstract :
We have successfully developed a low-power, low-noise silicon p-channel MOSFET working at 1.8 K. This MOSFET was produced by a standard 0.5μm BiCMOS process. From the typical current-voltage characteristics of this p-channel MOSFET at 1.8K, we obtained that the drain resistance rd is ∼2Mω, the transconductance gm is ∼35μS, and the input referred noise voltage is as low as ∼2μV/√Hz at 1Hz under low-drain current condition (∼1μA). No “kink”-like behavior was observed within the nominal operation range (−1.5V
Journal title :
Advances in Space Research
Serial Year :
2002
Journal title :
Advances in Space Research
Record number :
1128389
Link To Document :
