Title of article
A Kinetic Monte Carlo method for the simulation of heteroepitaxial growth Original Research Article
Author/Authors
F. Much، نويسنده , , M. Ahr، نويسنده , , M. Biehl، نويسنده , , W. Kinzel، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2002
Pages
4
From page
226
To page
229
Abstract
We introduce a simulation algorithm which allows the off-lattice simulation of various phenomena observed in heteroepitaxial growth (see e.g. [Politi et al., Phys. Rep. 324 (2000) 271–404]) like a critical layer thickness for the appearance of misfit dislocations, or self-assembled island formation in 1+1 dimensions. The only parameters of the model are deposition flux, simulation temperature and an interaction potential between the particles of the system.
Keywords
Kinetic Monte Carlo simulation , Heteroepitaxial growth , Misfit dislocations , Critical thickness , 2D–3D transition
Journal title
Computer Physics Communications
Serial Year
2002
Journal title
Computer Physics Communications
Record number
1135999
Link To Document