• Title of article

    MOLED: Simulation of multilayer organic light emitting diodes Original Research Article

  • Author/Authors

    H Houili، نويسنده , , E Tuti?، نويسنده , , H Lütjens، نويسنده , , M.N. Bussac، نويسنده , , L Zuppiroli، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2003
  • Pages
    15
  • From page
    108
  • To page
    122
  • Abstract
    MOLED solves the dynamics of electrons and holes in multilayer Organic Light Emitting Diodes (OLED). The carriers are injected on the positive and negative electrodes of the device by tunneling through a potential barrier. Thermal excitation processes across the barrier are also included. In the interior of the device the electron–hole recombination occurs when the two carriers are close enough, according to a model inspired from the one of Langevin. A fraction of these recombined pairs gives photons. The charge transport inside the organic material occurs through hopping. Several choices of mobility formulae are available in the code. MOLED can be used for OLEDs with an arbitrary number of layers. The output consists of numerous fields that describe the device performance. For example, there are the current, the recombination and the charge density distributions, the electric field distribution, the current-voltage characteristics and the device internal quantum efficiency.
  • Keywords
    Diode , Organic semiconductor , Image force , Langevin recombination , Carrier injection , Hopping conductivity
  • Journal title
    Computer Physics Communications
  • Serial Year
    2003
  • Journal title
    Computer Physics Communications
  • Record number

    1136239