Title of article :
A comparative ab initio study of the ‘ideal’ strength of single crystal α- and β-Si3N4 Original Research Article
Author/Authors :
Shigenobu Ogata، نويسنده , , Naoto Hirosaki، نويسنده , , Cenk Kocer، نويسنده , , Yoji Shibutani، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2004
Pages :
6
From page :
233
To page :
238
Abstract :
In this study, the ideal tensile and shear strengths of single crystal α- and β-Si3N4 were calculated using an ab initio density functional technique. The stress–strain curve of the silicon nitride polymorph was calculated from simulations of predefined strain deformation in various directions. In particular, the ideal strength calculated for an applied tensile γ11 strain, in the [1 0 0] plane, was estimated to be ∼51 and 57 GPa, for α- and β-Si3N4, respectively. Using a reported empirical method an estimate was also made of the Vickers indentation hardness of the α- and β-Si3N4 single crystals, ∼23.0 and 20.4 GPa, respectively. Moreover, a hardness estimate has been reported for Si3N4 in the literature: ∼21.0 GPa.
Keywords :
Pseudopotential , Polymorphs , Silicon nitride , Stess–strain data , Orthorhombic structure
Journal title :
ACTA Materialia
Serial Year :
2004
Journal title :
ACTA Materialia
Record number :
1140644
Link To Document :
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