Title of article :
The role of compound formation in reactive wetting: the Cu/SiC system Original Research Article
Author/Authors :
C. Rado، نويسنده , , B. Drevet، نويسنده , , N. EUSTATHOPOULOS، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2000
Pages :
9
From page :
4483
To page :
4491
Abstract :
Wettability and reactivity in the liquid Cu/SiC couple are studied by the sessile drop technique in high vacuum or purified helium using monocrystalline or sintered α-SiC. This couple exhibits a very unusual wetting behaviour. Particularly, during spreading, an amazing drop shape is established and, for specific conditions, “hexagonal wetting” is observed. We show that these observations can be correctly explained using the concepts of reactive wetting developed recently.
Keywords :
Surfaces & interfaces , Bonding , Corrosion , High temperature , Carbides
Journal title :
ACTA Materialia
Serial Year :
2000
Journal title :
ACTA Materialia
Record number :
1142009
Link To Document :
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