Kinetic model of low pressure film deposition from single precursor vapor in a well-mixed, cold-wall reactor Original Research Article

A phenomenological model was derived to describe the deposition kinetics of oxide film growth from thermally activated decomposition of vapor precursor on a heated surface at low pressure. A Langmuir derivation of mass balance on the growing film surface with surface saturation condition was used to model the deposition. Growth rate of solid oxide film was modeled as a function of molecular arrival rate, adsorption rate, and surface reaction rate. The model was applied to a novel metalorganic chemical vapor deposition process (Pulsed-MOCVD). The process features precisely controlled pulsed injection of precursor solution with ultrasonic atomization to deliver the precursor vapor to the reactor with no carrier gas. Growth behavior was predicted for an experimental investigation in which a dilute solution of Ti(OPr)4 (isopropoxide) in toluene was used as the liquid precursor for TiO2 rutile film on nickel substrate.