Title of article :
Direct observation of basal dislocation in sapphire by HRTEM Original Research Article
Author/Authors :
Atsutomo Nakamura، نويسنده , , Takahisa Yamamoto، نويسنده , , YUICHI IKUHARA، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2002
Pages :
8
From page :
101
To page :
108
Abstract :
Sapphire was compressed at 1400°C to activate basal slip, and the core structure of introduced basal dislocations was directly observed by HRTEM from a direction parallel to the dislocation line. It was confirmed that the basal dislocation dissociates into two half partial dislocations by the self-climb mechanism as suggested in a previous report. The two partials separated with a certain distance along the [0001] direction, which is normal to the glide plane. On the other hand, it was found that glide dissociation is not developed in the basal dislocation. This result implies that after the glide motion of the basal dislocation had stopped, glide dissociation makes a change to climb dissociation in the core of the dislocation.
Keywords :
High temperature , Sapphire (?-Al2O3) , high-resolution transmission electron microscopy (HRTEM) , Dislocations
Journal title :
ACTA Materialia
Serial Year :
2002
Journal title :
ACTA Materialia
Record number :
1142475
Link To Document :
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