Title of article :
Statistical fracture modelling of silicon with varying thickness Original Research Article
Author/Authors :
I. Paul، نويسنده , , B. Majeed، نويسنده , , K.M. Razeeb، نويسنده , , J. Barton، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2006
Pages :
10
From page :
3991
To page :
4000
Abstract :
The strength of silicon is a statistical property and can differ significantly between specimens processed under similar conditions. This necessitates the development of different statistical distribution models, which, amongst others, includes Weibull and log-normal models to determine the statistical fracture strength of material like silicon. This paper describes the development of statistical approach to model fracture strength of silicon of varying thickness. An application of classic weakest link model was done to correlate the number of links undergoing failure and the Weibull modulus. The Weibull modulus for different die thickness was found to be lying in the range of 3–5. Particularly for thin silicon samples, the log-normal model gave a relatively lower value of complexity criterion. It was also observed that the fracture strength of 525 μm thick silicon could be described using a normal distribution. Pooled strength data analysis was also performed to interpolate the fracture strength of specimens of different thickness.
Keywords :
Bending test , Semiconductor devices , Fracture , Modelling , SEM
Journal title :
ACTA Materialia
Serial Year :
2006
Journal title :
ACTA Materialia
Record number :
1142582
Link To Document :
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