Title of article :
Twin coarsening in CdTe(1 1 1) films grown on GaAs(1 0 0) Original Research Article
Author/Authors :
C. Polop، نويسنده , , I. Mora-Ser?، نويسنده , , C. Munuera، نويسنده , , J. Garc?a de Andrés، نويسنده , , V. Munoz-Sanjose، نويسنده , , C. Ocal، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2006
Abstract :
We present a scanning force microscopy study of twin coarsening in CdTe(1 1 1) films grown on GaAs(1 0 0). Two types of CdTe(1 1 1) twins grow epitaxially and with equal probability on the long-range wavy surface structure developed by previous in situ annealing of the GaAs(1 0 0) substrate. Due to this initial substrate wavy structure, the grain coarsening during film growth leads to a quasi-one-dimensional rippled pattern. We propose a coarsening mechanism between twins driven by the formation of stacking faults.
Keywords :
Coarsening , Twinning , Stacking faults , Semiconductor , Atomic force microscopy (AFM)
Journal title :
ACTA Materialia
Journal title :
ACTA Materialia