Title of article
Mn behaviors in Mn-implanted ZnO Original Research Article
Author/Authors
Y. Wang، نويسنده , , J. Zou، نويسنده , , Y.J. Li، نويسنده , , B. Zhang، نويسنده , , W. Lu، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2009
Pages
9
From page
2291
To page
2299
Abstract
The behavior of Mn when doped into ZnO by ion implantation was investigated by scanning transmission electron microscopy, electron energy loss spectroscopy and energy dispersive X-ray spectroscopy. Unlike the previously reported case of Co/Ni-implanted ZnO (where Co/Ni nanocrystals were observed), Mn implantation has been found to induce an O deficiency in ZnO, which results in the formation of hexagonal Zn nanocrystals when the implantation dose is sufficient. Further annealing of the high-dose Mn-implanted ZnO promotes the formation of ZnMn2O4 compounds near the surface and a porous structure within the implanted region. The fundamental reasons behind these physical phenomena are discussed.
Keywords
Zn precipitate , Mn implanted , Ion implantation , ZnO
Journal title
ACTA Materialia
Serial Year
2009
Journal title
ACTA Materialia
Record number
1144216
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