• Title of article

    Mn behaviors in Mn-implanted ZnO Original Research Article

  • Author/Authors

    Y. Wang، نويسنده , , J. Zou، نويسنده , , Y.J. Li، نويسنده , , B. Zhang، نويسنده , , W. Lu، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2009
  • Pages
    9
  • From page
    2291
  • To page
    2299
  • Abstract
    The behavior of Mn when doped into ZnO by ion implantation was investigated by scanning transmission electron microscopy, electron energy loss spectroscopy and energy dispersive X-ray spectroscopy. Unlike the previously reported case of Co/Ni-implanted ZnO (where Co/Ni nanocrystals were observed), Mn implantation has been found to induce an O deficiency in ZnO, which results in the formation of hexagonal Zn nanocrystals when the implantation dose is sufficient. Further annealing of the high-dose Mn-implanted ZnO promotes the formation of ZnMn2O4 compounds near the surface and a porous structure within the implanted region. The fundamental reasons behind these physical phenomena are discussed.
  • Keywords
    Zn precipitate , Mn implanted , Ion implantation , ZnO
  • Journal title
    ACTA Materialia
  • Serial Year
    2009
  • Journal title
    ACTA Materialia
  • Record number

    1144216