Title of article :
Strontium niobate high-k dielectrics: Film deposition and material properties Original Research Article
Author/Authors :
A. Hardy، نويسنده , , S. van Elshocht، نويسنده , , C. Adelmann، نويسنده , , J.A. Kittl، نويسنده , , S. de Gendt، نويسنده , , M. Heyns، نويسنده , , J. D’HAEN، نويسنده , , M. D’Olieslaeger، نويسنده , , M.K. Van Bael، نويسنده , , H. Van den Rul، نويسنده , , J. Mullens، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2010
Pages :
10
From page :
216
To page :
225
Abstract :
Strontium niobate ultrathin films were processed by water-based chemical solution deposition, an approach that offers environmental benefits. SrNb2O6 and Sr2Nb2O7 show high-k values, which is important for applications such as alternative gate dielectrics. The study of ultrathin films (thickness <30 nm) is crucial, as this is the thickness range for the application envisaged, and as film properties depend strongly on the film thickness. SrNb2O6 had a lower crystallization temperature, less interfacial silicate, lower carbonate content, and higher roughness compared to Sr2Nb2O7. The k values of amorphous films were limited for both compositions (k = 12–14). Crystallization and complete removal of organics or carbonates were accomplished by high-temperature annealing, but increased the roughness and leakage current. For Sr2Nb2O7, interfacial silicates were formed as well. Intermediate calcination steps improved the surface smoothness and increased the k value of SrNb2O6 up to 30.
Keywords :
Deposition , Oxides , Thin films , Dielectric constant , Sol–gel
Journal title :
ACTA Materialia
Serial Year :
2010
Journal title :
ACTA Materialia
Record number :
1144623
Link To Document :
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