Title of article :
Atomic-scale imaging and the effect of yttrium on the fracture toughness of silicon carbide ceramics Original Research Article
Author/Authors :
A.M. Kueck، نويسنده , , Q.M. Ramasse، نويسنده , , L.C De Jonghe، نويسنده , , R.O. Ritchie، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2010
Pages :
7
From page :
2999
To page :
3005
Abstract :
In SiC sintered with Al, B and C additions (ABC–SiC), the presence of Y in the Al–Si–O–C grain-boundary phase leads to less frequent crack deflection and lower toughness. When Y is absent from the grain-boundary phase and remains in the triple pockets, crack deflection is restored, and higher toughness results from grain-bridging mechanisms. The observations are consistent with elastic modulus changes in the intergranular phase, which depend on their yttria and silica content, and indicate that these can play an important role in determining crack deflection. While high-toughness ceramics such as ABC–SiC and Si3N4 rely on sintering additives forming crack-deflecting intergranular films, the present case is a striking example where the presence of a segregant in the grain boundary promotes transgranular fracture by raising the modulus of the nanoscale intergranular grain-boundary film.
Keywords :
Yttrium dopants , Silicon carbide , Fracture toughness , Ceramics
Journal title :
ACTA Materialia
Serial Year :
2010
Journal title :
ACTA Materialia
Record number :
1144897
Link To Document :
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