Dislocation dynamics simulations of dislocation interactions and stresses in thin films Original Research Article

The dislocation interactions that stop threading dislocations (threads) during relaxation at increasing applied strains in single-crystal thin films are investigated using large-scale three-dimensional dislocation dynamics simulations. Threads were observed to stop via interactions with both threads and misfit dislocations (misfits). Both types of interactions were shown to depend on stress inhomogeneity. Low-stress regions enabled threads to stop in weak thread–misfit interactions even at high average film stresses. Threads were also concentrated in low-stress regions, which facilitated their interaction with other threads. Threads accumulated in thread–thread interactions, and stopped only temporarily in thread–misfit interactions. The mean free path for dislocation motion is shown to be accurately predicted from details of the inhomogeneous stress state arising from the applied strain and the misfit structure. These behaviors are analyzed to present a more complete picture of film strength, strain hardening and relaxation.