Title of article :
Interaction of a dislocation with a crack tip: From stimulated emission to avalanche generation Original Research Article
Author/Authors :
G. Michot، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2011
Pages :
8
From page :
3864
To page :
3871
Abstract :
Stress relaxation at a crack tip relies on the material’s ability to generate dislocations. Despite the extensive literature devoted to crack–dislocation interaction, no one has yet explained how dislocations appear and multiply in order to build a fully plastic zone. Here we will show how a simple event, such as the intersection of a unique incoming dislocation with a crack front, induces the generation of new dislocations: this effect is called “stimulated emission”. Submitted to the applied crack stress field, these dislocations can repeat the stimulation process step by step all along the crack front, through a cross-slip mechanism. Such a rapidly increasing rate of dislocations nucleation leads to a sudden growth of the plastic zone (avalanche).
Keywords :
Dislocation mobility , Crack–dislocation interaction , Synchrotron radiation , Semiconductor , Fracture
Journal title :
ACTA Materialia
Serial Year :
2011
Journal title :
ACTA Materialia
Record number :
1145642
Link To Document :
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