Title of article
Thickness limitations in carbon nanotube reinforced silicon nitride coatings synthesized by vapor infiltration Original Research Article
Author/Authors
Abhishek K. Kothari، نويسنده , , Brian W. Sheldon، نويسنده , , Gyula Eres، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2012
Pages
8
From page
7104
To page
7111
Abstract
Chemical vapor infiltration is a convenient method for synthesizing carbon nanotube (CNT)-reinforced ceramic coatings. The thickness over which infiltration is relatively uniform is limited by gas phase diffusion in the pore structure. These effects were investigated in two types of silicon nitride matrix composites. With CNTs that were distributed uniformly on the substrate surface dense coatings were limited to thicknesses of several microns. With dual structured CNT arrays produced by photolithography coatings up to 400 μm thick were obtained with minimal residual porosity. Gas transport into these dual structured materials was facilitated by creating micron sized channels between “CNT pillars” (i.e. each pillar consisted of a large number of individual CNTs). The experimental results are consistent with basic comparisons between the rates of gas diffusion and silicon nitride growth in porous structures. This analysis also provides a general insight into optimizing infiltration conditions during the fabrication of thick CNT-reinforced composite coatings.
Keywords
Carbon nanotubes , Multiwalled carbon nanotubes , Chemical vapor infiltration , Coatings , Vapor infiltration
Journal title
ACTA Materialia
Serial Year
2012
Journal title
ACTA Materialia
Record number
1146670
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