• Title of article

    Thickness limitations in carbon nanotube reinforced silicon nitride coatings synthesized by vapor infiltration Original Research Article

  • Author/Authors

    Abhishek K. Kothari، نويسنده , , Brian W. Sheldon، نويسنده , , Gyula Eres، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2012
  • Pages
    8
  • From page
    7104
  • To page
    7111
  • Abstract
    Chemical vapor infiltration is a convenient method for synthesizing carbon nanotube (CNT)-reinforced ceramic coatings. The thickness over which infiltration is relatively uniform is limited by gas phase diffusion in the pore structure. These effects were investigated in two types of silicon nitride matrix composites. With CNTs that were distributed uniformly on the substrate surface dense coatings were limited to thicknesses of several microns. With dual structured CNT arrays produced by photolithography coatings up to 400 μm thick were obtained with minimal residual porosity. Gas transport into these dual structured materials was facilitated by creating micron sized channels between “CNT pillars” (i.e. each pillar consisted of a large number of individual CNTs). The experimental results are consistent with basic comparisons between the rates of gas diffusion and silicon nitride growth in porous structures. This analysis also provides a general insight into optimizing infiltration conditions during the fabrication of thick CNT-reinforced composite coatings.
  • Keywords
    Carbon nanotubes , Multiwalled carbon nanotubes , Chemical vapor infiltration , Coatings , Vapor infiltration
  • Journal title
    ACTA Materialia
  • Serial Year
    2012
  • Journal title
    ACTA Materialia
  • Record number

    1146670