Title of article :
Direct observation of asymmetric domain wall motion in a ferroelectric capacitor
Author/Authors :
Ja Kyung Lee، نويسنده , , Ga Young Shin، نويسنده , , Kyung Song، نويسنده , , Woo Seok Choi، نويسنده , , Yoon Ah Shin، نويسنده , , Seong Yong Park، نويسنده , , Jason Britson، نويسنده , , Ye Cao، نويسنده , , Long-Qing Chen، نويسنده , , Ho Nyung Lee، نويسنده , , Sang-Ho Oh، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2013
Pages :
13
From page :
6765
To page :
6777
Abstract :
We report in situ transmission electron microscopy observations of the 180° polarization switching process of a PbZr0.2Ti0.8O3 (PZT) capacitor. The preferential, but asymmetric, nucleation and forward growth of switched c-domains were observed at the PZT/electrode interfaces, arising due to the built-in electric field induced at each interface. The subsequent sideways growth of the switched domains was inhibited by the depolarization field due to the imperfect charge compensation at the counter-electrode and also at the boundaries with preexisting a-domains, which contributed further to the asymmetric switching behavior. It was found that the preexisting a-domains split into fine a- and c-domains constituting a 90° stripe domain pattern during the 180° polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.
Keywords :
Ferroelectric thin film , Polarization switching , 90° Domains , Depolarization field , In situ transmission electron microscopy
Journal title :
ACTA Materialia
Serial Year :
2013
Journal title :
ACTA Materialia
Record number :
1147287
Link To Document :
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