Author/Authors :
Carmalt، Claire J. نويسنده , , Molloy، Kieran C. نويسنده , , Parkin، Ivan P. نويسنده , , Blackman، Christopher S. نويسنده , , ONeill، Shane A. نويسنده , , Apostolico، Leonardo نويسنده ,
Abstract :
The dual-source atmospheric-pressure chemical vapor deposition of group IVb metal phosphide films from tetrakisdimethylamido(metal) and cyclohexylphosphine precursors is presented. Deposition took place at low temperatures (<500 C), and nitrogen and carbon contamination of the films was negligible. The films had typical stoichiometric metal phosphide properties of high electrical conductivity, hardness, and chemical resistivity.
