Deposition of Bismuth Chalcogenide Thin Films Using Novel Single-Source Precursors by Metal-Organic Chemical Vapor Deposition

The metal-organic compounds, Bi[(EPR2)2N]3 (E = S, Se; R = Ph, iPr), have been synthesized and used as single-source precursors for the deposition of bismuth chalcogenide thin films via low-pressure and aerosolassisted metal-organic chemical vapor deposition. Crystalline thin films of rhombohedral Bi2Se3 (using Bi[(SePiPr2)2N]3), hexagonal BiSe (using Bi[(SePPh2) 2N]3), and orthorhombic Bi2S3 (using Bi[(SPR2)2N]3) have been deposited on glass substrates. Films have been characterized by X-ray powder diffraction, scanning electron microscopy, and energy-dispersive analysis of X-rays.