Modeling Studies of the Effect of Twins on the X-ray Diffraction Patterns of Boron Carbide

Simulation studies were carried out to analyze the effect of planar defects (twins) on the X-ray diffraction patterns of boron carbide, B4C. The presence of these defects had a marked influence on the patterns. Significant changes in the height, width, and other features of diffraction peaks are seen as a result of the presence of twins. The change in the patterns was directly related to the concentration of the twins. Two models were used for the location of the twin plane and the simulation showed a significant difference in the patterns for the same twin probability. The effect of grain size was also examined in this analysis. The results are compared with experimental observations on B4C synthesized at different temperatures.