Title of article
Synthesis and Field-Emission Properties of Ga2O3-C Nanocables
Author/Authors
Hu، Junqing نويسنده , , Zhan، Jinhua نويسنده , , Bando، Yoshio نويسنده , , Golberg، Dmitri نويسنده , , Li، Yubao نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2004
Pages
-5157
From page
5158
To page
0
Abstract
Uniform Ga2O3-C nanocables with an average core diameter of 40 nm, wall thickness of 6 nm, and lengths of up to dozens of (mu)m were generated via co-thermal evaporation of gallium oxide and activated carbon powder. The nanocable formation is discussed based on thermodynamics and crystallography. Gallium oxide and carbon generate gaseous Ga2O and CO at a higher temperature; they then recombine to form Ga2O3 and C. The simultaneous generation of Ga2O3 and C ensures continuous uniform coatings of carbon on gallium oxide nanowires. Field-emission measurements indicated that the nanocables exhibited an unusual sharp increase in emission current density near the threshold field.
Journal title
CHEMISTRY OF MATERIALS
Serial Year
2004
Journal title
CHEMISTRY OF MATERIALS
Record number
115611
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