• Title of article

    Electroresistance and magnetoresistance in La0.9Ba0.1MnO3 thin films

  • Author/Authors

    Gao، J. نويسنده , , Hu، F.X. نويسنده , , Wang، Z.H. نويسنده ,

  • Pages
    -101
  • From page
    102
  • To page
    0
  • Abstract
    The electroresistance and magnetoresistance effects have been investigated in La0.9Ba0.1MnO3 epitaxial thin films. Tensile strain caused by substrate mismatch makes the Curie temperature TC of the film at ~300 K. The influence of an applied dc-current on the resistance in the absence of a magnetic field was studied. Significant change of the peak resistance at different currents was found.The reduction of the peak resistance reaches ~27% with an electric current density up to 1.3 * 10^5 A cm-2. We also studied colossal magnetoresistance (CMR) effect in the films. Applying a magnetic field of 2 T could lead to a magnetoresistance as large as 42%. The reduction of resistance caused by a current density ~1.3 * 10^5 A cm^-2 was found to be equivalent to the CMR effect caused by 1.5 T near TC. The phenomenon that the resistance in CMR manganites could be easily controlled by the electric current should be of high interest for both fundamental research and practical applications.
  • Keywords
    Indium sulphide , Sol-gel synthesis , Nanocomposite , Optical properties
  • Journal title
    Astroparticle Physics
  • Record number

    115958