Title of article
Ultraprecision grinding technologies in silicon semiconductor processing
Author/Authors
G.، Byrne نويسنده , , E.، Ahearne نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-252
From page
253
To page
0
Abstract
The production of silicon substrates for integrated circuits continues to set standards in levels of precision form and finish tolerances required of surface generation processes. Extreme tolerances are specified for a range of parameters such as total thickness variation, global and local planarity, and surface finish over substrate dimensions of up to 300 mm in diameter (currentgeneration silicon wafer). These tolerances are related to the ʹdesign ruleʹ for each generation of microprocessor and memory unit. The economic and technological environment of an industry that demands such precision is reviewed. The general production process is then described with particular reference to surface grinding as an enabling technology. The context of developments in ultraprecision machine tool technology is delineated, requirements for assuring the indicated tolerances are set out and machine solutions representing the ʹstate-of-the-artʹ and ʹnext-generationʹ machine technologies reported.
Keywords
Metal , bioaccumulation , bryophyte , temporal variations , atmospheric deposition
Journal title
JOURNAL OF ENGINNERING MANUFACTURE
Serial Year
2004
Journal title
JOURNAL OF ENGINNERING MANUFACTURE
Record number
116306
Link To Document