Title of article
Growth of cadmium telluride from the vapor phase under low gravity conditions
Author/Authors
Benz، K.-W. نويسنده , , Babentsov، V. نويسنده , , Fiederle، M. نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-188
From page
189
To page
0
Abstract
We present a review of the vapor phase growth of cadmium telluride under conditions of reduced gravity in space. Particular emphasis is paid to the growth in a closed system by sublimation THM. Structural and electrical properties of the material grown under microgravity ((mu)-g) and earth gravity (1-g) conditions are reviewed and compared. A positive influence of (mu)-g conditions on CdTe crystal quality is reported. A brief literature survey of the vapor growth of other semiconductors (GeTe, HgI2, CdHgTe, ZnSe) in a (mu)-gravity environment is also presented.
Keywords
A1. Convection , A2. Growth from vapor , Segregation , Doping , Microgravity conditions , B2. Semiconducting cadmium compounds
Journal title
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
Serial Year
2004
Journal title
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
Record number
117158
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