Title of article :
Growth of cadmium telluride from the vapor phase under low gravity conditions
Author/Authors :
Benz، K.-W. نويسنده , , Babentsov، V. نويسنده , , Fiederle، M. نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
-188
From page :
189
To page :
0
Abstract :
We present a review of the vapor phase growth of cadmium telluride under conditions of reduced gravity in space. Particular emphasis is paid to the growth in a closed system by sublimation THM. Structural and electrical properties of the material grown under microgravity ((mu)-g) and earth gravity (1-g) conditions are reviewed and compared. A positive influence of (mu)-g conditions on CdTe crystal quality is reported. A brief literature survey of the vapor growth of other semiconductors (GeTe, HgI2, CdHgTe, ZnSe) in a (mu)-gravity environment is also presented.
Keywords :
A1. Convection , A2. Growth from vapor , Segregation , Doping , Microgravity conditions , B2. Semiconducting cadmium compounds
Journal title :
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
Serial Year :
2004
Journal title :
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
Record number :
117158
Link To Document :
بازگشت