Title of article :
Ge-on-GaAs film resistance thermometers for cryogenic applications Original Research Article
Author/Authors :
V.F. Mitin، نويسنده , , P.C. McDonald، نويسنده , , F. Pavese، نويسنده , , N.S. Boltovets، نويسنده , , V.V. Kholevchuk، نويسنده , , I.Yu. Nemish، نويسنده , , V.V. Basanets، نويسنده , , V.K. Dugaev، نويسنده , , P.V. Sorokin، نويسنده , , R.V. Konakova، نويسنده , , E.F. Venger، نويسنده , , E.V. Mitin، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
9
From page :
474
To page :
482
Abstract :
Our paper discusses and reviews the properties of a range of semiconductor sensors, which have been developed for thermometry in cryogenic applications. The range of sensors developed includes a family of single and dual element resistance thermometers based on Ge-on-GaAs films. The thin film devices were produced using standard semiconductor processing techniques and provide high device sensitivity within the range 0.03–500 K. The construction and characteristics of the sensors are presented together with a discussion of their sensitivities to magnetic fields and ionising radiation.
Keywords :
A. Thin films , D. Cryoelectronics , D. Instrumentation , A. Semiconductors , D. Magnetic measurements
Journal title :
Cryogenics
Serial Year :
2007
Journal title :
Cryogenics
Record number :
1172790
Link To Document :
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