Title of article
Ge-on-GaAs film resistance thermometers for cryogenic applications Original Research Article
Author/Authors
V.F. Mitin، نويسنده , , P.C. McDonald، نويسنده , , F. Pavese، نويسنده , , N.S. Boltovets، نويسنده , , V.V. Kholevchuk، نويسنده , , I.Yu. Nemish، نويسنده , , V.V. Basanets، نويسنده , , V.K. Dugaev، نويسنده , , P.V. Sorokin، نويسنده , , R.V. Konakova، نويسنده , , E.F. Venger، نويسنده , , E.V. Mitin، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
9
From page
474
To page
482
Abstract
Our paper discusses and reviews the properties of a range of semiconductor sensors, which have been developed for thermometry in cryogenic applications. The range of sensors developed includes a family of single and dual element resistance thermometers based on Ge-on-GaAs films. The thin film devices were produced using standard semiconductor processing techniques and provide high device sensitivity within the range 0.03–500 K. The construction and characteristics of the sensors are presented together with a discussion of their sensitivities to magnetic fields and ionising radiation.
Keywords
A. Thin films , D. Cryoelectronics , D. Instrumentation , A. Semiconductors , D. Magnetic measurements
Journal title
Cryogenics
Serial Year
2007
Journal title
Cryogenics
Record number
1172790
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